Our non-destructive cleaning utlizes an atomic level cluster beam , that is capable to remove nanoscale particles natural oxidized layers, metal contamination, organics, and other impurities from the wafer fabrication process on large-size wafersc (as larde as 8").

The service realizes selective etching of different materials, which can refine the microstruc-

ture of different materials and realize maskless imaging.

Our atomic level surface smoothing technology can smooth the material surface to atomic level, Ra<0.5nm, with high surface flatness, providing an ideal substrate for later processes.

Ultra-shallow ion implantation service can realize sub-5nm ion implantation with a reso-

lution of up to 0.6 nm, which can accurately control the implantation depth, concentration and distribution. This technology is critical to enhance the performance of semiconductor devices, can effectively improve the electrical properties to meet the increasing require-

ments of modern integreted circuits for high performance and high density.

Atomic level deposition allows you to precisely manipulate atoms and deposit ultra-thin films, as thin as monoatomic layer. It is suitable for various subtrates with different shaps, with excellent 3D conformality, high surface flatness and adhesion.

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